Kingston 4GB DDR3 1600MHz KVR16LS11/4

Kingston 4GB DDR3 1600MHz KVR16LS11/4

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Tip memorie DDR3
Capacitate memorie 4 GB
Frecventa 1600 MHz
Kit 1x4GB

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SODIMM 4GB 1600MHz DDR3L Non-ECC CL11 1.35V KINGSTON, KVR16LS11/4KVR16LS11/44GB 1Rx8 512M x 64-Bit PC3L-12800CL11 204-Pin SODIMM  DESCRIPTIONThis document describes ValueRAM's 512M x 64-bit (4GB)DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, lowvoltage, memory module, based on eight 512M x 8-bit FBGAcomponents. The SPD is programmed to JEDEC standardlatency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This204-pin SODIMM uses gold contact fingers. The electrical andmechanical specifications are as follows:FEATURESJEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~1.575V) Power SupplyVDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)800MHz fCK for 1600Mb/sec/pin8 independent internal bankProgrammable CAS Latency: 11, 10, 9, 8, 7, 6Programmable Additive Latency: 0, CL - 2, or CL - 1 clock8-bit pre-fetchBurst Length: 8 (Interleave without any limit, sequential withstarting address 000 only), 4 with tCCD = 4 which does notallow seamless read or write [either on the fly using A12 orMRS]Bi-directional Differential Data StrobeInternal(self) calibration : Internal self calibration through ZQpin (RZQ : 240 ohm ± 1%)On Die Termination using ODT pinAverage Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°CAsynchronous ResetPCB: Height 1.18 (30mm), double sided componentSPECIFICATIONSCL(IDD) 11 cyclesRow Cycle Time (tRCmin) 48.125ns (min. )Refresh to Active/Refresh 260ns (min. )Command Time (tRFCmin)Row Active Time (tRASmin) 35ns (min. )Maximum Operating Power (1.35V) = 2.376 W*UL Rating 94 V - 0Operating Temperature 0o C to 85o CStorage Temperature -55o C to +100o C*Power will vary depending on the SDRAM.
Denumiri similare la Memorie notebook Kingston 4GB DDR3 1600MHz KVR16LS11/4: 4 GB DDR 3 1600 MHz KVR 16 LS 11 4, 4GBDDR31600MHzKVR16LS114, 4 GB DDR3 1600MHz KVR16LS11/4, 4GB DDR3 1600MHz KVR16LS11/ 4
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